BSM25GD120DN2 - Igbt Module, 1200V, Econopack3

Igbt Module, 1200V, Econopack3; Transistor Polarity:N Channel; Dc Collector Current:35A; Collector Emitter Saturation Voltage Vce(On):3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:Econopack; No. Of Pins:17Pins; Operating Temperature Max:125°C; Product Range:-; Svhc:No Svhc (27-Jun-2018); Current Ic Continuous A Max:25A; Current Temperature:80°C; Full Power Rating Temperature:25°C; Module Configuration:Six; No. Of Transistors:6; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C To +125°C; Power Dissipation Max:200W; Pulsed Current Icm:50A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2Kv