ZHB6790 - Transistor Array, H-Bridge

Transistor Array, H-Bridge; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage V(Br)Ceo:40V; Power Dissipation Pd:2W; Dc Collector Current:2A; Dc Current Gain Hfe:500Hfe; Transistor Case Style:Sot-223; No. Of Pins:8Pins; Operating Temperature Max:150°C; Msl:-; Svhc:No Svhc (15-Jan-2018); Av Current Ic:2A; Collector Emitter Saturation Voltage Vce(On):-140Mv; Continuous Collector Current Ic Max:6A; Current Ic @ Vce Sat:1A; Current Ic Continuous A Max:6A; Current Ic Hfe Npn Device:100Ma; Current Ic Hfe Pnp Device:100Ma; Current Ic Hfe:2Ma; Gain Bandwidth Ft Min:100Mhz; Gain Bandwidth Ft Typ:100Mhz; Hfe Min:150; Hfe Npn Device @ Ic Min:500; Hfe Pnp Device @ Ic Min:300; Module Configuration:Quad; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Power Dissipation Ptot Max:2W; Pulsed Current Icm:6A; Smd Marking:Zhb6790; Saturation Current (Isat):1A; Termination Type:Surface Mount Device; Voltage Vcbo:50V; Voltage Vce Sat @ Ic Npn Max:500Mv