SGW30N60. - Igbt, Fast

Igbt, Fast; Dc Collector Current:41A; Collector Emitter Saturation Voltage Vce(On):2.4V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:-; Svhc:No Svhc (27-Jun-2018); Current Ic @ Vce Sat:30A; Current Ic Continuous A Max:41A; Current Temperature:25°C; Fall Time Tf:70Ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Power Dissipation Ptot Max:250W; Pulsed Current Icm:112A; Rise Time:35Ns; Transistor Polarity:N Channel; Transistor Type:Igbt