BC857BV - Transistor, Pnp, Sot-666

Transistor, Pnp, Sot-666; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:45V; Power Dissipation Pd:200Mw; Dc Collector Current:-100Ma; Dc Current Gain Hfe:200Hfe; Transistor Case Style:Sot-666; No. Of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jan-2018); Collector Emitter Saturation Voltage Vce(On):-100Mv; Current Ic Hfe:2Ma; Full Power Rating Temperature:25°C; Gain Bandwidth Ft Typ:100Mhz; Hfe Min:200; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C To +150°C; Power Dissipation Ptot Max:300Mw; Power Dissipation Per Device Max:200Mw; Smd Marking:3F; Voltage Vcbo:50V