PBSS8110Y - Transistor, Npn, Sot-363

Transistor, Npn, Sot-363; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:-; Power Dissipation Pd:290Mw; Dc Collector Current:1A; Dc Current Gain Hfe:150Hfe; Transistor Case Style:Sot-363; No. Of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jan-2018); Collector Emitter Saturation Voltage Vce(On):40Mv; Continuous Collector Current Ic Max:1A; Current Ic Continuous A Max:1A; Current Ic Hfe:1A; Full Power Rating Temperature:25°C; Gain Bandwidth Ft Typ:100Mhz; Hfe Min:80; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C To +150°C; Power Dissipation Ptot Max:430Mw; Power Dissipation Per Device Max:290Mw; Smd Marking:81; Voltage Vcbo:120V