IRF7663PBF - Mosfet, P, Micro-8

Mosfet, P, Micro-8; Transistor Polarity:P Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.02Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:1.8W; Transistor Case Style:Μsoic; No. Of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; Msl:Msl 1 - Unlimited; Svhc:No Svhc (27-Jun-2018); Avalanche Single Pulse Energy Eas:115Mj; Capacitance Ciss Typ:2520Pf; Charge Qrr @ Tj = 25°C Typ:50Nc; Current Id Max:-8.2A; Current Temperature:25°C; External Depth:5.03Mm; External Length / Height:1.11Mm; External Width:3.05Mm; Full Power Rating Temperature:25°C; Gfs Min:14.5A/V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:0.65Mm; No. Of Transistors:1; On State Resistance Max:20Mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Pulse Current Idm:66A; Reverse Recovery Time Trr Typ:70Ns; Row Pitch:4.24Mm