IRGS8B60KPBF - Igbt, D2-Pak

Igbt, D2-Pak; Dc Collector Current:28A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:167W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-263; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:Msl 1 - Unlimited; Svhc:No Svhc (27-Jun-2018); Current Ic Continuous A Max:28A; Fall Time Max:42Ns; Fall Time Tf:42Ns; Operating Temperature Min:-55°C; Power Dissipation Max:167W; Pulsed Current Icm:56A; Rise Time:21Ns; Smd Marking:Gs8b60k; Transistor Polarity:N Channel; Transistor Type:Igbt; Voltage Vces:600V