IRF6608TR1 - Mosfet, N, Directfet, St

Mosfet, N, Directfet, St; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:12V; Power Dissipation Pd:2.1W; Transistor Case Style:Directfet St; No. Of Pins:7Pins; Operating Temperature Max:-; Msl:-; Svhc:No Svhc (27-Jun-2018); Capacitance Ciss Typ:2120Pf; Charge Qrr @ Tj = 25°C Typ:33Nc; Current Id Max:9.4A; Current Temperature:25°C; External Depth:4.85Mm; External Length / Height:0.7Mm; External Width:3.95Mm; Full Power Rating Temperature:25°C; Ic Package (Case Style):St; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. Of Transistors:1; On State Resistance Max:9Mohm; Pulse Current Idm:100A; Reverse Recovery Time Trr Typ:31Ns; Smd Marking:6608; Voltage Vds:30V; Voltage Vgs Max:12V; Voltage Vgs Th Max:3V; Voltage Vgs Th Min:1V