IRF6614TR1 - Mosfet, N, Directfet, St

Mosfet, N, Directfet, St; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.1W; Transistor Case Style:Directfet St; No. Of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; Msl:Msl 3 - 168 Hours; Svhc:No Svhc (27-Jun-2018); Capacitance Ciss Typ:2560Pf; Charge Qrr @ Tj = 25°C Typ:5.5Nc; Current Id Max:12.7A; Current Temperature:25°C; External Depth:4.85Mm; External Length / Height:0.7Mm; External Width:3.95Mm; Full Power Rating Temperature:25°C; Ic Package (Case Style):St; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. Of Transistors:1; On State Resistance Max:8.3Mohm; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C To +150°C; Pulse Current Idm:102A; Reverse Recovery Time Trr Typ:15Ns; Smd Marking:6614; Voltage Vds:40V; Voltage Vds Typ:40V