SI2309DS - Mosfet, P, Sot-23

Mosfet, P, Sot-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.25A; Drain Source Voltage Vds:-60V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:Sot-23; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jun-2015); Current Id Max:-1.25A; Current Temperature:25°C; Device Marking:Si2309ds; External Depth:2.5Mm; External Length / Height:1.12Mm; External Width:3.05Mm; Full Power Rating Temperature:25°C; No. Of Transistors:1; On State Resistance Max:340Mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Pulse Current Idm:8A; Smd Marking:A9; Tape Width:8Mm; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds On Measurement:-10V; Voltage Vgs Th Max:-1V