FQB10N20 - Mosfet, N, D2-Pak

Mosfet, N, D2-Pak; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.36Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:87W; Transistor Case Style:To-263; No. Of Pins:3Pins; Operating Temperature Max:-; Msl:-; Svhc:No Svhc (15-Jan-2018); Alternate Case Style:D2-Pak; Power Dissipation On 1" Sq. Pcb:3.13W; Pulse Current Idm:40A; Smd Marking:Fqb10n20; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Rds On Measurement:10V; Voltage Vgs Th Max:4V