FQA11N90 - Mosfet, N, To-3P

Mosfet, N, To-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:900V; On Resistance Rds(On):0.96Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:300W; Transistor Case Style:To-3P; No. Of Pins:3Pins; Operating Temperature Max:-; Msl:-; Svhc:No Svhc (15-Jan-2018); Current Id Max:11.4A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. Of Transistors:1; Power Dissipation Ptot Max:300W; Pulse Current Idm:45.6A; Voltage Vds Typ:900V; Voltage Vgs Rds On Measurement:10V