FQA55N10 - Mosfet, N, To-3P

Mosfet, N, To-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:To-3P; No. Of Pins:3Pins; Operating Temperature Max:-; Msl:-; Svhc:No Svhc (15-Jan-2018); Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Pulse Current Idm:244A; Voltage Vds Typ:100V; Voltage Vgs Rds On Measurement:10V