FDC636P - Mosfet, P, Supersot-6

Mosfet, P, Supersot-6; Transistor Polarity:P Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.13Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600Mv; Power Dissipation Pd:1.6W; Transistor Case Style:Supersot; No. Of Pins:6Pins; Operating Temperature Max:150°C; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jan-2018); Current Id Max:-2.8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Pulse Current Idm:11A; Smd Marking:Fdc636p; Uni / Bi Directional Polarity:P; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Rds On Measurement:-4.5V; Voltage Vgs Th Max:-1V