FQP8P10 - Mosfet, P, To-220

Mosfet, P, To-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W; Transistor Case Style:To-220; No. Of Pins:3Pins; Operating Temperature Max:-; Msl:-; Svhc:No Svhc (15-Jan-2018); Alternate Case Style:Sot-78B; Avalanche Single Pulse Energy Eas:150Mj; Current Temperature:25°C; Device Marking:Fqp8p10; Full Power Rating Temperature:25°C; Lead Spacing:2.54Mm; No. Of Transistors:1; Pin Configuration:A; Pin Format:1G,(2+Tab)D, 3S; Power Dissipation Ptot Max:65W; Pulse Current Idm:32A; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Rds On Measurement:-10V