2MBI100S-120-50 - Igbt, Dual, Module, 100A, 1200V, Npt

Igbt, Dual, Module, 100A, 1200V, Npt; Transistor Polarity:N Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):2.6V; Power Dissipation Pd:780W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:Module; No. Of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Current Ic @ Vce Sat:100A; Current Ic Continuous A Max:150A; Current Temperature:25°C; External Depth:62Mm; External Length / Height:30Mm; External Width:108Mm; Fall Time Tf:450Ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5Kv; Junction Temperature Tj Max:150°C; Module Configuration:Dual; No. Of Transistors:2; Power Dissipation Max:780W; Pulsed Current Icm:300A; Rise Time:350Ns; Termination Type:Screw; Voltage Vces:1.2Kv