2MBI100TA-060-50 - Igbt, Dual, Module, 100A, 600V, Npt

Igbt, Dual, Module, 100A, 600V, Npt; Transistor Polarity:N Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2.4V; Power Dissipation Pd:310W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:Module; No. Of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Current Ic @ Vce Sat:100A; Current Ic Continuous A Max:100A; Current Temperature:25°C; External Depth:34Mm; External Length / Height:30Mm; External Width:92Mm; Fall Time Tf:400Ns; Full Power Rating Temperature:25°C; Height:30Mm; Isolation Voltage:2.5Kv; Junction Temperature Tj Max:150°C; Module Configuration:Dual; No. Of Transistors:2; Power Dissipation Max:310W; Pulsed Current Icm:200A; Rise Time:400Ns; Termination Type:Screw; Voltage Vces:600V