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    HGTG30N60A4D - IGBT, TO-247

    Üretici firma: On Semiconductor
    Sipariş Kodu: 9846611
    Üretici parti numarası: HGTG30N60A4D
    Kullanılabilirlik: 3952 stokta

    U.K. Stock

    İngiltere stoklu ürünler 7-10 iş günü içerisinde teslim edilir.

    ₺ 149,4056 +KDV

    Fiyatı :Adet

    i h
    Çok Al, Az Öde, TASARRUF ET!
    Adet
    Fiyat
    1+
    ₺ 149,4056
    5+
    ₺ 139,1978
    10+
    ₺ 128,9899
    50+
    ₺ 126,3916
    Mevzuat ve Çevre
    Menşe Ülke: KR
    RoHS Uyumlu: Y10
    SVHC: 0
    Ağırlık (KG): 0,0054
    Gümrük Tarife No: 85412900
    Ürün özellikleri
    DC Collector Current75A
    Collector Emitter Saturation Voltage Vce(on)2.6V
    Power Dissipation Pd463W
    Collector Emitter Voltage V(br)ceo600V
    Transistor Case StyleTO-247
    No. of Pins3Pins
    Operating Temperature Max150°C
    Product Range-
    Automotive Qualification Standard-
    MSL-
    SVHCLead (27-Jun-2018)
    Alternate Case StyleSOT-249
    Current Ic Continuous a Max75A
    Current Temperature25°C
    Fall Time tf38ns
    Full Power Rating Temperature25°C
    No. of Transistors1
    Operating Temperature Min-55°C
    Operating Temperature Range-55°C to +150°C
    Power Dissipation Max463W
    Pulsed Current Icm240A
    Rise Time12s
    Transistor PolarityN Channel
    Transistor TypeIGBT
    Voltage Vces600V
    0.0 0
    Kendi görüşünü yaz Kapat
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    IGBT, TO-247; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4D; Fall Time Typ:38ns; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:With flywheel diode; Power Dissipation Max:463W; Pulsed Current Icm:240A; Rise Time:12s; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V