SGH80N60UFDTU - Igbt, 600V, 80A, To-3P

Igbt, 600V, 80A, To-3P; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2.6V; Power Dissipation Pd:195W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-3P; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; Msl:-; Svhc:No Svhc (15-Jan-2018); Current Ic Continuous A Max:80A; Current Temperature:25°C; Device Marking:Sgh80n60ufdtu; Fall Time Tf:50Ns; Full Power Rating Temperature:25°C; No. Of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Pin Format:Gce; Pulsed Current Icm:220A; Rise Time:50Ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:Igbt; Voltage Vces:600V