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    HGTP12N60A4D - IGBT, TO-220

    Manufacturer: On Semiconductor
    Order Code: 1057676
    Manufacturer part number: HGTP12N60A4D
    Technical Datasheet: HGTP12N60A4D Datasheet
    Availability: 1856 in stock

    U.K. Stock

    UK stock products are delivered within 7-10 work days.

    ₺ 31.2302 + VAT

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    ₺ 31.2302
    10+
    ₺ 23.8930
    100+
    ₺ 18.3431
    250+
    ₺ 17.5905
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    ₺ 15.3329
    1000+
    ₺ 13.5456
    Legislation and Environmental
    Country of Origin: KR
    RoHS Compliant: Y10
    SVHC: 0
    Weight (KG): 0.0020
    Tariff No: 85412900
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    IGBT, TO-220; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:54A; Fall Time tf:18ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:167W; Pulsed Current Icm:96A; Rise Time:8ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V