F4150R12KS4BOSA1 - IGBT, MODULE, N-CH, 1.2KV, 180A

IGBT, MODULE, N-CH, 1.2KV, 180A; Transistor Polarity:N Channel; DC Collector Current:180A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:960W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:125°C; Product Range:EconoPACK 3 Series; SVHC:No SVHC (27-Jun-2018)