FF100R12RT4HOSA1 - IGBT, MODULE, N-CH, 1.2KV, 100A

IGBT, MODULE, N-CH, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:555W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018)