FP35R12KT4B11BOSA1 - IGBT, MODULE, N-CH, 1.2KV, 35A

IGBT, MODULE, N-CH, 1.2KV, 35A; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPIM 2 Series; SVHC:No SVHC (27-Jun-2018)