FD150R12RT4HOSA1 - IGBT MODULE, N CH, 1.2KV, 150A, 790W

IGBT MODULE, N CH, 1.2KV, 150A, 790W; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:11Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jan-2019)