FP50R12KT4GBOSA1 - IGBT MODULE, NPN, 1.85V, 50A

IGBT MODULE, NPN, 1.85V, 50A; Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:35Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C