2MBI100VA-120-50 - IGBT MODULE, 1.2KV, 100A

IGBT MODULE, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:555W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Current Ic @ Vce Sat:100A; Current Ic Continuous a Max:150A; Current Temperature:25°C; External Depth:62mm; External Length / Height:30mm; External Width:108mm; Fall Time tf:450ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Module Configuration:Dual; No. of Transistors:2; Power Dissipation Max:780W; Pulsed Current Icm:300A; Rise Time:350ns; Termination Type:Screw; Voltage Vces:1.2kV