7MBR50VB-120-50 - IGBT MODULE, 1.2KV, 50A

IGBT MODULE, 1.2KV, 50A; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:24Pins; Operating Temperature Max:150°C; Product Range:-; Current Ic @ Vce Sat:75A; Current Ic Continuous a Max:75A; Current Temperature:25°C; External Depth:62mm; External Length / Height:20mm; External Width:122mm; Fall Time tf:450ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Module Configuration:Seven; No. of Transistors:7; Power Dissipation Max:360W; Pulsed Current Icm:150A; Rise Time:350ns; Termination Type:Screw; Voltage Vces:1.2kV