SISS61DN-T1-GE3 - MOSFET, P-CH, -20V, -111.9A, 150DEG C

MOSFET, P-CH, -20V, -111.9A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-111.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)