IRF6614TR1 - MOSFET, N, DIRECTFET, ST

MOSFET, N, DIRECTFET, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.1W; Transistor Case Style:DirectFET ST; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Typ:2560pF; Charge Qrr @ Tj = 25°C Typ:5.5nC; Current Id Max:12.7A; Current Temperature:25°C; External Depth:4.85mm; External Length / Height:0.7mm; External Width:3.95mm; Full Power Rating Temperature:25°C; IC Package (Case style):ST; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:8.3mohm; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:102A; Reverse Recovery Time trr Typ:15ns; SMD Marking:6614; Voltage Vds:40V; Voltage Vds Typ:40V