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    ZXMN10A07F - MOSFET, N, SOT-23

    Üretici firma: Diodes Inc.
    Sipariş Kodu: 9525700
    Üretici parti numarası: ZXMN10A07F
    Teknik Bilgi: ZXMN10A07F Datasheet
    Kullanılabilirlik: 3965 stokta

    U.K. Stock

    İngiltere stoklu ürünler 7-10 iş günü içerisinde teslim edilir.

    ₺ 20,6102 +KDV

    Fiyatı :Adet (Kesik Bantta Sağlanır)

    Bu üründen en az 5 adet alınabilmektedir.
    i h
    Çok Al, Az Öde, TASARRUF ET!
    Adet
    Fiyat
    5+
    ₺ 20,6102
    10+
    ₺ 17,2201
    100+
    ₺ 11,5276
    500+
    ₺ 9,0825
    1000+
    ₺ 7,0115
    3000+
    ₺ 6,6798
    6000+
    ₺ 6,3057
    Mevzuat ve Çevre
    Menşe Ülke: CN
    RoHS Uyumlu: Y10
    SVHC: 0
    Ağırlık (KG): 0,0001
    Gümrük Tarife No: 85412900
    Ürün özellikleri
    Transistor PolarityN Channel
    Continuous Drain Current Id640mA
    Drain Source Voltage Vds100V
    On Resistance Rds(on)1ohm
    Rds(on) Test Voltage Vgs10V
    Threshold Voltage Vgs4V
    Power Dissipation Pd625mW
    Transistor Case StyleSOT-23
    No. of Pins3Pins
    Operating Temperature Max150°C
    Product Range-
    Automotive Qualification Standard-
    MSLMSL 1 - Unlimited
    SVHCNo SVHC (15-Jan-2019)
    Current Id Max640mA
    Current Temperature25°C
    Junction Temperature Tj Max150°C
    Junction Temperature Tj Min-55°C
    No. of Transistors1
    On State Resistance Max1ohm
    Operating Temperature Min-55°C
    Operating Temperature Range-55°C to +150°C
    Power Dissipation Ptot Max625mW
    Voltage Vds Typ100V
    Voltage Vgs Max4V
    Voltage Vgs Rds on Measurement10V
    Voltage Vgs th Min2V
    0.0 0
    Kendi görüşünü yaz Kapat
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    MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:640mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:625mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:640mA; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:1ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; Pulse Current Idm:2.5A; SMD Marking:7N1; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:2V