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    SI7456DP-T1-GE3 - MOSFET, N, SO-8

    Üretici firma: Vishay
    Sipariş Kodu: 9550704
    Üretici parti numarası: SI7456DP-T1-GE3
    Kullanılabilirlik: 5316 stokta

    U.K. Stock

    İngiltere stoklu ürünler 7-10 iş günü içerisinde teslim edilir.

    ₺ 96,9263 +KDV

    Fiyatı :Adet (Kesik Bantta Sağlanır)

    i h
    Çok Al, Az Öde, TASARRUF ET!
    Adet
    Fiyat
    1+
    ₺ 96,9263
    10+
    ₺ 77,6352
    25+
    ₺ 70,1069
    100+
    ₺ 62,1081
    500+
    ₺ 51,2863
    1000+
    ₺ 49,8747
    3000+
    ₺ 48,9337
    Mevzuat ve Çevre
    Menşe Ülke: CN
    RoHS Uyumlu: Y10
    SVHC: 0
    Ağırlık (KG): 0,0001
    Gümrük Tarife No: 85412900
    Ürün özellikleri
    Transistor PolarityN Channel
    Continuous Drain Current Id5.7A
    Drain Source Voltage Vds100V
    Rds(on) Test Voltage Vgs10V
    Threshold Voltage Vgs4V
    Power Dissipation Pd1.9W
    Transistor Case StylePowerPAK SO
    No. of Pins8Pins
    Operating Temperature Max150°C
    Product Range-
    Automotive Qualification Standard-
    MSLMSL 1 - Unlimited
    SVHCNo SVHC (15-Jun-2015)
    Current Temperature25°C
    External Length / Height1.2mm
    External Width6.2mm
    Full Power Rating Temperature25°C
    Junction Temperature Tj Max150°C
    Junction Temperature Tj Min-55°C
    Junction to Case Thermal Resistance A1.8°C/W
    Operating Temperature Min-55°C
    Pulse Current Idm40A
    0.0 0
    Kendi görüşünü yaz Kapat
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    MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Temperature:25°C; Device Marking:SI7456DP; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; N-channel Gate Charge:44nC; Operating Temperature Min:-55°C; Pulse Current Idm:40A