SI7456DP-T1-GE3 - MOSFET, N, SO-8

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Temperature:25°C; Device Marking:SI7456DP; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; N-channel Gate Charge:44nC; Operating Temperature Min:-55°C; Pulse Current Idm:40A