FDC6561AN - MOSFET, DUAL, NN, SUPERSOT-6

MOSFET, DUAL, NN, SUPERSOT-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.082ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel:2.5A; Current Id Max:2.5A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:30V; Full Power Rating Temperature:25°C; Module Configuration:Dual; No. of Transistors:2; On Resistance Rds(on), N Channel:0.082ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:10A; SMD Marking:FDC6561AN; Uni / Bi Directional Polarity:NN; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V