FQB55N10 - MOSFET, N, D2-PAK

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:155W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:D2-PAK; Current Id Max:55A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation on 1" Sq. PCB:3.75W; Pulse Current Idm:220A; SMD Marking:FQB55N10; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V