FQP19N20 - MOSFET, N, TO-220

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:140W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:250mJ; Capacitance Ciss Typ:1220pF; Current Id Max:19.4A; Current Temperature:25°C; Device Marking:FQP19N20; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:120mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:a; Power Dissipation Ptot Max:140W; Pulse Current Idm:78A; Reverse Recovery Time trr Typ:140ns; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V