HGTP12N60A4D - Igbt, To-220

Igbt, To-220; Dc Collector Current:54A; Collector Emitter Saturation Voltage Vce(On):2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-220Ab; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; Msl:-; Svhc:Lead (27-Jun-2018); Current Ic Continuous A Max:54A; Fall Time Tf:18Ns; Full Power Rating Temperature:25°C; No. Of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Power Dissipation Max:167W; Pulsed Current Icm:96A; Rise Time:8Ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:Igbt; Voltage Vces:600V