QSE113 - Infrared Phototransistor, Npn, 880Nm,

Infrared Phototransistor, Npn, 880Nm,; Wavelength Typ:880Nm; Viewing Angle:25°; Power Consumption:100Mw; No. Of Pins:2Pins; Transistor Case Style:Side Looking; Product Range:-; Automotive Qualification Standard:-; Msl:-; Svhc:No Svhc (27-Jun-2018); Angle Of Half Sensitivity ±:25°; Current Ic Typ:1.5Ma; External Depth:2.54Mm; External Length / Height:5.08Mm; External Width:4.44Mm; Fall Time Tf:8Μs; Lead Length:12.7Mm; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C To +100°C; Peak Spectral Response Wavelength:880Nm; Peak Wavelength:880Nm; Rise Time:8Μs; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Transistor Polarity:Npn; Transistor Type:Photo; Voltage Vcc:5V