SK35GD126ET - Igbt Module, 1200V, 6 Pack

Igbt Module, 1200V, 6 Pack; Transistor Polarity:N Channel; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:1.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:Semitop 3; No. Of Pins:36Pins; Operating Temperature Max:150°C; Product Range:-; Svhc:No Svhc (15-Jun-2015); Av Current Ic:40A; Current Ic Continuous A Max:40A; Current Ic Continuous B Max:32A; Current Temperature:25°C; External Depth:31Mm; External Width:55Mm; Fixing Centres:52.5Mm; Fixing Hole Diameter:2Mm; Module Configuration:Six; No. Of Transistors:6; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C To +150°C; Pulsed Current Icm:80A; Rise Time:30Ns; Smd Marking:Semitop3; Termination Type:Screw; Voltage:1.2Kv; Voltage Vces:1.2Kv