PT4800E0000F - Phototransistor

Phototransistor; Wavelength Typ:800Nm; Viewing Angle:35°; Power Consumption:75Mw; No. Of Pins:2Pins; Transistor Case Style:Side Looking; Product Range:-; Automotive Qualification Standard:-; Msl:-; Svhc:No Svhc (15-Jan-2018); Angle Of Half Sensitivity ±:35°; Collector Emitter Saturation Voltage Vce(On):0.4V; Continuous Collector Current Ic Max:20A; Current Ic Typ:400Ma; Dark Current:100Na; External Depth:1.5Mm; External Length / Height:3.5Mm; External Width:3Mm; Fall Time Tf:3.5Μs; Lead Length:17.5Mm; Lead Spacing:2.54Mm; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C To +85°C; Peak Wavelength:800Nm; Rise Time:3Μs; Storage Temperature Max:+85°C; Storage Temperature Min:-40°C; Transistor Polarity:Npn; Transistor Type:Photo