BC847BVN,115 - TRANSISTOR, NPN-PNP, SOT-666

TRANSISTOR, NPN/PNP, SOT-666; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-666; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):100mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:300mW; Power Dissipation per device Max:200mW; SMD Marking:13; Voltage Vcbo:50V