PEMT1,115 - TRANSISTOR, PNP, SOT-666

TRANSISTOR, PNP, SOT-666; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-666; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:1mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:300mW; Power Dissipation per device Max:200mW; SMD Marking:FF; Transition Frequency ft:100MHz; Voltage Vcbo:50V