OP550B - Phototransistor, Lateral

Phototransistor, Lateral; Wavelength Typ:935Nm; Viewing Angle:-; Power Consumption:100Mw; No. Of Pins:2Pins; Transistor Case Style:Side Looking; Product Range:-; Automotive Qualification Standard:-; Msl:-; Svhc:No Svhc (27-Jun-2018); Collector Emitter Saturation Voltage Vce(On):0.4V; Current Ic Min:1.3Ma; Current Ic Typ:4.7Ma; Dark Current:100Na; External Depth:2.28Mm; External Length / Height:5.71Mm; External Width:4.45Mm; Lead Length:12.7Mm; Lead Spacing:2.54Mm; Nom Sensitivity @ Mw/Cm²:1.3Ma @ 1Mw/Cm²; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C To +100°C; Peak Spectral Response Wavelength:935Nm; Power Dissipation Pd:100Mw; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Transistor Polarity:Npn; Transistor Type:Npn; Voltage Vcc:5V